Demonstration of passivation using a low-temperature-grown, Al-containing window layer by HVPE-Reference-Cited by-同舟云学术

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Demonstration of passivation using a low-temperature-grown, Al-containing window layer by HVPE

Published:2020-06-14 Issue: Volume: Page:
ISSN:
Container-title:2020 47th IEEE Photovoltaic Specialists Conference (PVSC)
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Author:

Metaferia Wondwosen,Schulte Kevin L.,Simon John,Guiling David,Ptak Aaron J.

Funder

National Renewable Energy Laboratory

U.S. Department of Energy

EERE

Solar Energy Technologies Office

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9300349/9300350/09300791.pdf?arnumber=9300791

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhanced surface passivation of GaAs nanostructures via an optimized SiO2 sol-gel shell growth;Applied Physics Letters;2024-03-18

2. AlInP‐passivated III–V solar cells grown by dynamic hydride vapor‐phase epitaxy;Progress in Photovoltaics: Research and Applications;2022-10-02

3. InGaP/GaAs dual‐junction solar cells with AlInGaP passivation layer grown by hydride vapor phase epitaxy;Progress in Photovoltaics: Research and Applications;2021-07-22

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