15-GHz Epitaxial AlN FBARs on SiC Substrates-Reference-Cited by-同舟云学术

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15-GHz Epitaxial AlN FBARs on SiC Substrates

Published:2023-06 Issue:6 Volume:44 Page:903-906
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Zhao Wenwen¹^ORCID,Asadi Mohammad Javad²,Li Lei²^ORCID,Chaudhuri Reet²^ORCID,Nomoto Kazuki²,Xing Huili Grace³^ORCID,Hwang James C. M.⁴^ORCID,Jena Debdeep³^ORCID

Affiliation:

1. School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA

2. School of Electrical and Computer Engineering, Cornell University, Ithaca, NY, USA

3. Department of Materials Science and Engineering, School of Electrical and Computer Engineering, Kavli Institute for Nanoscience, Cornell University, Ithaca, NY, USA

4. Department of Materials Science and Engineering, Cornell University, Ithaca, NY, USA

Funder

Defense Advanced Research Projects Agency

Semiconductor Research Corporation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

https://ieeexplore.ieee.org/ielam/55/10132335/10105958-aam.pdf

Reference32 articles.

1. A 10 GHz Single-Crystalline Scandium-Doped Aluminum Nitride Lamb-Wave Resonator

2. Super-high-frequency two-port AlN contour-mode resonators for RF applications

3. Limits of quality factor in bulk-mode micromechanical resonators

4. Effect of phonon interactions on limiting the f.Q product of micromechanical resonators

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-Q film bulk acoustic resonator with high quality AlN film based on transfer method;Physica Scripta;2024-08-08

2. Performance Limiting Factors of 15-GHz Ku-Band FBARs;IEEE Transactions on Electron Devices;2024-08

3. Effects of high-temperature thermal annealing on the crystal structure and phase separation in sputtered ScAlN thin films;Journal of Alloys and Compounds;2024-08

4. Highly improved quality factor of the film bulk acoustic wave resonator by introducing a high quality ZnO buffer layer;Applied Surface Science;2024-07

5. A 19 GHz All-Epitaxial Al₀.₈Sc₀.₂N Cascaded FBAR for RF Filtering Applications;IEEE Electron Device Letters;2024-07

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