High-Responsivity Ti3C2 Tx/SiC Nano-Cone Holes UV van der Waals Schottky Photodiode by Maskless Etching-Reference-Cited by-同舟云学术

High-Responsivity Ti₃C₂ T_x/SiC Nano-Cone Holes UV van der Waals Schottky Photodiode by Maskless Etching

Published:2023-04 Issue:4 Volume:44 Page:654-657
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Mao Shuming¹,Yang Zhaohui¹,Sun Yangyang¹,Wang Chen¹,Ma Yuanming¹,Chen Shirong¹^ORCID,Xu Gaobin¹,Yu Yongqiang¹^ORCID

Affiliation:

1. School of Microelectronics, Micro Electromechanical System Research Center of Engineering and Technology of Anhui Province, Hefei University of Technology, Anhui, Hefei, China

Funder

National Key Research and Development Program of China

Natural Science Foundation of Anhui Province

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10081123/10049423.pdf?arnumber=10049423

Reference26 articles.

1. High‐Barrier‐Height Ti ₃ C ₂ T _x /Si Microstructure Schottky Junction‐Based Self‐Powered Photodetectors for Photoplethysmographic Monitoring

2. Near-unity quantum efficiency of broadband black silicon photodiodes with an induced junction

3. Ohmic contact properties of magnetron sputtered Ti3SiC2 on n- and p-type 4H-silicon carbide

4. Reduction of Specific Contact Resistance on n-Type Implanted 4H-SiC Through Argon Inductively Coupled Plasma Treatment and Post-Metal Deposition Annealing

5. Maskless random antireflective nanotexturing of single crystal SiC

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