0.18 dB Low-Noise Figure at 10 GHz for GaN MIS-HEMT With Plasma-Enhanced Atomic Layer Deposition SiN Layer-Reference-Cited by-同舟云学术

0.18 dB Low-Noise Figure at 10 GHz for GaN MIS-HEMT With Plasma-Enhanced Atomic Layer Deposition SiN Layer

Published:2023-07 Issue:7 Volume:44 Page:1080-1083
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Liu Xinyu¹^ORCID,Zhang Sheng¹^ORCID,Wei Ke¹^ORCID,Guo Jiaqi¹,He Xiaoqiang¹,Zhang Yichuan¹^ORCID,Yin Haibo¹,Huang Sen¹^ORCID,Chen Xiaojuan¹^ORCID,Zheng Yingkui¹,Wang Xinhua¹^ORCID,Ouyang Sihua²,Li Yankui¹

Affiliation:

1. Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China

2. Focus Microwaves Company Ltd, Beijing, China

Funder

China Postdoctoral Science Foundation

Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10168002/10144098.pdf?arnumber=10144098

Reference15 articles.

1. High-performance 0.1-?m gate AlGaN/GaN HEMTs on silicon with low-noise figure at 20 GHz;sun;IEEE Electron Device Lett,2009

2. DC, RF, and microwave noise performances of AlGaN/GaN HEMTs on sapphire substrates

3. Broadband microwave noise characteristics of high-linearity composite-channel Al/sub 0.3/Ga/sub 0.7/N/Al/sub 0.05/Ga/sub 0.95/N/GaN HEMTs

4. Microwave noise characteristics of AlGaN/GaN HEMTs on SiC substrates for broad-band low-noise amplifiers

5. AlGaN/GaN HEMTs on SiC with over 100 GHz f/sub T/ and low microwave noise

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