Fabrication of Bilayer Stacked Antiferroelectric/ Ferroelectric HfxZr1-xO2 FeRAM and FeFET With Improved Leakage Current and Robust Reliability by Modifying Atomic Layer Deposition Temperatures

Author:

Lo Chieh1ORCID,Chang Shu-Chieh1,Lin Kun-Tao1,Chen Chung-Kuang1,Chang Chen-Feng1,Zhang Feng-Shuo1,Lu Zong-Han1,Chao Tien-Sheng1ORCID

Affiliation:

1. Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

Funder

Ministry of Science and Technology

Taiwan Semiconductor Research Institute (TSRI), Taiwan, for the capacitor and field-effect transistor (FETs) processing

Materials Analysis Technology Inc. (MA-tek), Taiwan, for material analysis

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

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