A K-Band Bulk Acoustic Wave Resonator Using Periodically Poled Al0.72Sc0.28N
Author:
Affiliation:
1. Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA
2. Akoustis Inc., Huntersville, NC, USA
3. Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA, USA
Funder
Defense Advanced Research Project Agency through the COmpact Front-end Filters at the ElEment-level (COFFEE) Program
Singh Center for Nanotechnology, which is funded under the NSF National Nanotechnology Coordinated Infrastructure Program
Department of Defense or the U.S. Government
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
https://ieeexplore.ieee.org/ielam/55/10168002/10141977-aam.pdf
Reference32 articles.
1. SAW and BAW technologies for RF filter applications: A review of the relative strengths and weaknesses
2. Controlling Residual Stress and Suppression of Anomalous Grains in Aluminum Scandium Nitride Films Grown Directly on Silicon
3. K-band ladder filters employing air-gap type thin film bulk acoustic resonators
4. Effect of size and shape on the performances of BAW resonators: A model and its applications
5. Solidly Mounted Resonators with Ultra‐High Operating Frequencies Based on 3R‐MoS2 Atomic Flakes
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