Study of High-Q Laterally Excited Bulk Wave Resonator With Smaller Gap-Width Reflectors-Reference-Cited by-同舟云学术

Study of High-Q Laterally Excited Bulk Wave Resonator With Smaller Gap-Width Reflectors

Published:2023-08 Issue:8 Volume:44 Page:1344-1347
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Gu Xiyu¹^ORCID,Liu Yan²^ORCID,Xie Ying³,Wen Zhiwei³^ORCID,Qu Yuanhang³^ORCID,Liu Wenjuan²^ORCID,Cai Yao²^ORCID,Guo Shishang¹,Sun Chengliang²^ORCID

Affiliation:

1. Key Laboratory of Artificial Micro, Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, China

2. Hubei Yangtze Memory Laboratories, Wuhan, China

3. Institute of Technological Science, Wuhan University, Wuhan, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10199118/10149453.pdf?arnumber=10149453

Reference20 articles.

1. Study of Thin Film LiNbO₃ Laterally Excited Bulk Acoustic Resonators

2. Generalized Gradient Approximation Made Simple

3. Use of double-raised-border structure for quality factor enhancement of type II piston mode FBAR

4. Surface-Wave Resonators Using Grooved Reflectors

5. Fabrication and analysis of thin film lithum niobate resonators for 5 GHz frequency and large Kt2 applications;yandrapalli;Proc IEEE 34th Int Conf Micro Electro Mech Syst (MEMS),2021

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