Micro-LED Pixel Circuit Using Low-Temperature Poly-Si Oxide TFTs With Fast Rise and Fall Times of Pulse Width Modulation for Low Gray Expression
Author:
Affiliation:
1. Department of Information Display, Advanced Display Research Center (ADRC), Kyung Hee University, Seoul, South Korea
Funder
Ministry of Trade, Industry and Energy (MOTIE, South Korea) through the Technology Innovation Program or the Industrial Strategic Technology Development Program
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/10230308/10197514.pdf?arnumber=10197514
Reference17 articles.
1. Ultra-Low Power, Emission Gate Driver With Pulse Width Modulation Using Low-Temperature Poly-Si Oxide Thin-Film Transistors
2. A Novel Gate Driver Working Under Depletion Mode Oxide TFTs Using Low-Temperature Poly-Si Oxide TFTs
3. A 38μm-Pitch, 3-Output Gate Driver Using Low-Temperature Poly-Si Oxide TFTs for High Resolution Display
4. Gate driver with low‐temperature polycrystalline silicon and oxide thin‐film‐transistor circuits for low power consumption and narrow bezel AMOLED displays
5. 61‐4: A New Pixel Circuit Based on LTPO Backplane Technology for Micro‐LED Display Using PWM Method
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1. Low-Power Phototransistor with Enhanced Visible-Light Photoresponse and Electrical Performances Using an IGZO/IZO Heterostructure;Materials;2024-01-30
2. A New PWM Operational Scheme for MicroLED Displays Using Inverter and Dynamic SWEEP Signal Slope for Low Gray Level Expression;IEEE Access;2023
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