Modulation of C<sub>iss</sub> of a 4H-SiC Planar MOSFET With a Shorter Sidewall and a Thicker Gate-Reference-Cited by-同舟云学术

Modulation of C_iss of a 4H-SiC Planar MOSFET With a Shorter Sidewall and a Thicker Gate

Published:2023-11 Issue:11 Volume:44 Page:1825-1828
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Chen Shih-Hsuan¹^ORCID,Liu Chih-Lun¹^ORCID,Huang Chien-Neng¹^ORCID,Hsieh Hsiang-Min¹^ORCID,Chang Ping-Kai¹^ORCID,Wu Ruei-Ci¹,Lee Kung-Yen²^ORCID,Huang Chih-Fang³^ORCID

Affiliation:

1. Department of Engineering Science and Ocean Engineering, National Taiwan University, Taipei, Taiwan

2. Department of Engineering Science and Ocean Engineering, Advanced Research Center for Green Materials Science and Technology, and the Graduate School of Advanced Technology, National Taiwan University, Taipei, Taiwan

3. Institute of Electronics Engineering, National Tsing Hua University, Hsinchu, Taiwan

Funder

National Science and Technology Council, Taiwan

Ministry of Education

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10294238/10243454.pdf?arnumber=10243454

Reference12 articles.

1. Accuracy of Three Interterminal Capacitance Models for SiC Power MOSFETs Under Fast Switching

2. Measurement Methodology for Accurate Modeling of SiC MOSFET Switching Behavior Over Wide Voltage and Current Ranges

3. Accurate Analytical Switching-On Loss Model of SiC MOSFET Considering Dynamic Transfer Characteristic and Q gd

4. Extending Two-Element Capacitance Extraction Method Toward Ultraleaky Gate Oxides Using a Short-Channel Length

5. A Simple Equation for the Energy Stored by Voltage-Dependent Capacitances