Analytical Modeling of Source-to-Drain Tunneling Current Down to Cryogenic Temperatures
Author:
Affiliation:
1. Integrated Circuits Laboratory (ICLAB), Ecole Polytechnique Fédérale de Lausanne (EPFL), Neuchâtel, Switzerland
2. Corporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan
Funder
European Union’s Horizon 2020 Research and Innovation Program
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/10109212/10064350.pdf?arnumber=10064350
Reference21 articles.
1. Quantum Transport: Atom to Transistor
2. Cryogenic Temperature and Doping Analysis of Source-to-Drain Tunneling Current in Ultrashort-Channel Nanosheet MOSFETs
3. Analytical relationship between subthreshold swing of thermionic and tunnelling currents
4. A generalized Landauer-Datta-Lundstrom electron transport model
5. Short-channel effects on MOSFET subthreshold swing
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