Cryogenic Temperature and Doping Analysis of Source-to-Drain Tunneling Current in Ultrashort-Channel Nanosheet MOSFETs-Reference-Cited by-同舟云学术

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Cryogenic Temperature and Doping Analysis of Source-to-Drain Tunneling Current in Ultrashort-Channel Nanosheet MOSFETs

Published:2022-03 Issue:3 Volume:69 Page:1588-1595
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Yilmaz Kerim¹,Iniguez Benjamin²^ORCID,Lime Francois²^ORCID,Kloes Alexander¹^ORCID

Affiliation:

1. Competence Center Nanoelectronics and Photonics (NanoP), Technische Hochschule Mittelhessen (THM)–University of Applied Sciences, Giessen, Germany

2. Departament d’Enginyeria Electronica, Eléctrica i Automatica (DEEEA), Universitat Rovira i Virgili, Tarragona, Spain

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9722602/09703100.pdf?arnumber=9703100

Reference25 articles.

1. Theoretical Limit of Low Temperature Subthreshold Swing in Field-Effect Transistors

2. Cryogenic Subthreshold Swing Saturation in FD-SOI MOSFETs Described With Band Broadening

3. Subthreshold Swing Saturation of Nanoscale MOSFETs Due to Source-to-Drain Tunneling at Cryogenic Temperatures

4. Direct Tunneling from Source to Drain in Nanometer-Scale Silicon Transistors

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Exploring Intertwined quantum and cryogenic behaviour in ultra-scaled 10 nm MOSFET: a NEGF quantum ballistic simulation;Physica Scripta;2024-05-07

2. Analytical Modeling of Cryogenic Subthreshold Currents in 22-nm FDSOI Technology;IEEE Electron Device Letters;2024-01

3. Teletransportation paradox and quantum consciousness;Physics Essays;2023-09-03

4. Analytical Modeling of Source-to-Drain Tunneling Current Down to Cryogenic Temperatures;IEEE Electron Device Letters;2023-05

5. Three Temperature Regimes in Subthreshold Characteristics of FD-SOI pMOSFETs From Room-Temperature to Cryogenic Temperatures;IEEE Journal of the Electron Devices Society;2023

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