Field-Effect Transistor Based on MoSi2N4 and WSi2N4 Monolayers Under Biaxial Strain: A Computational Study of the Electronic Properties
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9690079/09675801.pdf?arnumber=9675801
Reference36 articles.
1. Performance Analysis of Strained Monolayer ${\rm MoS}_{2}$ MOSFET
2. Structural, electrical, and Rashba properties of monolayer Janus Si2XY ( X,Y =P, As, Sb, and Bi)
3. Interplay between stacking order and in-plane strain on the electrical properties of bilayer antimonene
4. Computer graphics and graphical user interfaces as tools in simulations of matter at the atomic scale
5. Scaling Behaviors of Graphene Nanoribbon FETs: A Three-Dimensional Quantum Simulation Study
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2. Electrical Contacts in Monolayer MoSi2N4 Transistors;ACS Applied Materials & Interfaces;2024-09-04
3. Electronic, rashba and photocatalytic properties of janus XMoYZ2 (X= S, Se, Te ; Y=Si, Ge and Z=N, P) monolayers;Physica E: Low-dimensional Systems and Nanostructures;2024-09
4. Strain Engineering on the Electronic Structure and Optical Properties of Monolayer WSi2X4 (X = N, P, As);Journal of Electronic Materials;2024-08-05
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