Formation of F-Doped Offset Region for Spray Pyrolyzed Self-Aligned Coplanar Amorphous Zinc–Tin–Oxide Thin-Film Transistor by NF₃ Plasma Treatment-Reference-Cited by-同舟云学术

Formation of F-Doped Offset Region for Spray Pyrolyzed Self-Aligned Coplanar Amorphous Zinc–Tin–Oxide Thin-Film Transistor by NF₃ Plasma Treatment

Published:2021-03 Issue:3 Volume:68 Page:1057-1062
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Kim Youn Goo^ORCID,Bukke Ravindra Naik^ORCID,Lee Jiseob^ORCID,Saha Jewel Kumer^ORCID,Jang Jin^ORCID

Funder

Technology Innovation Program (or Industrial Strategic Technology Development Program

Development of low temperature patterning and heat treatment technology for light and thermal stability in soluble oxide TFT manufacturing) funded by the Ministry of Trade, Industry and Energy

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9361759/09336311.pdf?arnumber=9336311

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Hump Phenomenon and Instability of Oxide TFT Were Eliminated by Interfacial Passivation and UV + Thermal Annealing Treatment;ACS Applied Electronic Materials;2023-08-16

2. Phase selectivity of ternary Zn-O-Sn films regulated by oxygen and fluorine;Materials Today Communications;2023-06

3. A Simple Doping Process Achieved by Modifying the Passivation Layer for Self-Aligned Top-Gate In-Ga-Zn-O Thin-Film Transistors at 200 °C;Nanomaterials;2022-11-16

4. Analysis of the valence state of tin in ZnSnOx thin-film transistors;Journal of Materials Science: Materials in Electronics;2022-10-14

5. 37.3: Self‐Aligned Top‐Gate Amorphous ZnSnO Thin‐Film Transistor with Thermal‐Stable Al Reaction‐Doped Source/Drain;SID Symposium Digest of Technical Papers;2022-10