Synaptic VO<sub>2</sub> Resistor on Glass Substrate for Neuromorphic Circuits-Reference-Cited by-同舟云学术

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Synaptic VO₂ Resistor on Glass Substrate for Neuromorphic Circuits

Published:2023-06-29 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE 24th International Conference of Young Professionals in Electron Devices and Materials (EDM)
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Author:

Kalmykov Dmitry A.¹^ORCID,Bortnikov Sergey G.²^ORCID,Aliev Vladimir Sh.²^ORCID

Affiliation:

1. Novosibirsk State Technical University,dept. of Radio Engineering and Electronics,Novosibirsk,Russia

2. Rzhanov Institute of Semiconductor Physics SB RAS,Laboratory No5,Novosibirsk,Russia

Funder

Russian Science Foundation

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10224902/10225012/10225019.pdf?arnumber=10225019

Reference10 articles.

1. Temperature hysteresis loop formation during metal-semiconductor phase transition in vanadium dioxide films, [Formirovanie petli temperaturnogo gisterezisa pri fazovomperekhode metall-poluprovodnik v plenkah dioksida vanadiya];klimov;Technical Physics Journal [Zhurnal tehnicheskoj fiziki],2002

2. Vanadium Dioxide: A Peierls-Mott Insulator Stable against Disorder

3. Current oscillations as a manifestation of spatio-temporal inhomogeneity of temperature distribution in vanadium dioxide films at semiconductor-metal phase transition

4. The two components of the crystallographic transition in VO2

5. Oxides Which Show a Metal-to-Insulator Transition at the Neel Temperature

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