Current oscillations as a manifestation of spatio-temporal inhomogeneity of temperature distribution in vanadium dioxide films at semiconductor-metal phase transition

Author:

Aliev V. Sh.,Bortnikov S. G.,Mzhelskiy I. V.,Badmaeva I. A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Synaptic VO2 Resistor on Glass Substrate for Neuromorphic Circuits;2023 IEEE 24th International Conference of Young Professionals in Electron Devices and Materials (EDM);2023-06-29

2. Modeling of VO2 Relaxation Oscillator in the Fast-Slow System Approximation;IEEE Transactions on Electron Devices;2022-02

3. Electrical and Thermal Dynamics of Self-Oscillations in TaOx-Based Threshold Switching Devices;ACS Applied Electronic Materials;2020-02-03

4. VO2 film temperature dynamics at low-frequency current self-oscillations;Journal of Applied Physics;2018-02-21

5. Influence of thermal boundary conditions on the current-driven resistive transition in VO2 microbridges;Applied Physics Letters;2015-10-05

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