Influence of the Design of UV Radiation Detectors on Photoelectrical Characteristics-Reference-Cited by-同舟云学术

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Influence of the Design of UV Radiation Detectors on Photoelectrical Characteristics

Published:2023-06-29 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE 24th International Conference of Young Professionals in Electron Devices and Materials (EDM)
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Author:

Tsymbalov Alexander V.¹,Kalygina Vera M.²,Kiseleva Olga S.²,Kushnarev Bogdan O.¹

Affiliation:

1. Tomsk state University,Laboratory of metal oxide semiconductors,Tomsk,Russia

2. Tomsk state University,Faculty of Radiophysics,Tomsk,Russia

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10224902/10225012/10225061.pdf?arnumber=10225061

Reference12 articles.

1. Ultra-High Performance Amorphous Ga2O3 Photodetector;qin;Sci Adv,2021

2. Review—RF Sputtered Films of Ga2O3

3. Band bending and surface defects in ?-Ga2O3;lovejoy;Applied Physics Letter,2012

4. The road ahead for ultrawide bandgap solar-blind UV photodetectors

5. The real structure of ε-Ga2O3 and its relation to κ-phase

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