Fin Width and Bias Dependence of the Response of Triple-Gate MOSFETs to Total Dose Irradiation-Reference-Cited by-同舟云学术

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Fin Width and Bias Dependence of the Response of Triple-Gate MOSFETs to Total Dose Irradiation

Published:2011-12 Issue:6 Volume:58 Page:2871-2875
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Song Jae-Joon,Choi Bo Kyoung,Zhang En Xia,Schrimpf Ronald D.,Fleetwood Daniel M.,Park Chan-Hoon,Jeong Yoon-Ha,Kim Ohyun

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx5/23/6093861/06081974.pdf?arnumber=6081974

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