Self-aligned nickel, cobalt/tantalum nitride stacked-gate pMOSFETs fabricated with a low temperature process after metal electrode deposition-Reference-Cited by-同舟云学术

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Self-aligned nickel, cobalt/tantalum nitride stacked-gate pMOSFETs fabricated with a low temperature process after metal electrode deposition

Published:2003-12 Issue:12 Volume:50 Page:2456-2460
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:en
Short-container-title:IEEE Trans. Electron Devices

Author:

Pan J.,Woo C.,Minh-Van Ngo ,Chih-Yuh Yang ,Besser P.,King P.,Bernard J.,Adem E.,Tracy B.,Pellerin J.,Qi Xiang ,Ming-Ren Lin

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/28087/01255608.pdf?arnumber=1255608

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Tunable electrical properties of TaNx thin films grown by ionized physical vapor deposition;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2014-09

2. Profile control of novel non-Si gates using BCl[sub 3]∕N[sub 2] plasma;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2007

3. Investigation of NiSi Fully-Silicided Gate on SiO2and HfO2for Applications in Metal–Oxide–Semiconductor Field-Effect Transistors;Japanese Journal of Applied Physics;2006-07-07

4. Investigation of Molybdenum Nitride Gate on SiO[sub 2] and HfO[sub 2] for MOSFET Application;Journal of The Electrochemical Society;2006

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