Investigation of NiSi Fully-Silicided Gate on SiO2and HfO2for Applications in Metal–Oxide–Semiconductor Field-Effect Transistors
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Published:2006-07-07
Issue:7
Volume:45
Page:5702-5707
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:en
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Huang Chih-Feng,Tsui Bing-Yue
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering