A Self-Consistent Compact Model of Ballistic Nanowire MOSFET With Rectangular Cross Section-Reference-Cited by-同舟云学术

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A Self-Consistent Compact Model of Ballistic Nanowire MOSFET With Rectangular Cross Section

Published:2013-02 Issue:2 Volume:60 Page:856-862
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Numata Tatsuhiro,Uno Shigeyasu,Hattori Junichi,Mil'nikov Gennady,Kamakura Yoshinari,Mori Nobuya,Nakazato Kazuo

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/6415298/06403540.pdf?arnumber=6403540

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design and Analysis of Gallium Arsenide-Based Nanowire Using Coupled Non-Equilibrium Green Function for RF Hybrid Applications;Nanomaterials;2023-03-07

2. A New Approach to Modeling Ultrashort Channel Ballistic Nanowire GAA MOSFETs;Nanomaterials;2022-09-28

3. A unified compact model for electrostatics of III–V GAA transistors with different geometries;Journal of Computational Electronics;2021-08-07

4. Nanowire gate-all-around MOSFETs modeling: ballistic transport incorporating the source-to-drain tunneling;Japanese Journal of Applied Physics;2020-06-25

5. Ultrathin Junctionless Nanowire FET Model, Including 2-D Quantum Confinements;IEEE Transactions on Electron Devices;2019-09

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