19.7 A 16Gb ReRAM with 200MB/s write and 1GB/s read in 27nm technology-Reference-Cited by-同舟云学术

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19.7 A 16Gb ReRAM with 200MB/s write and 1GB/s read in 27nm technology

Published:2014-02 Issue: Volume: Page:
ISSN:
Container-title:2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC)
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Author:

Fackenthal Richard,Kitagawa Makoto,Otsuka Wataru,Prall Kirk,Mills Duane,Tsutsui Keiichi,Javanifard Jahanshir,Tedrow Kerry,Tsushima Tomohito,Shibahara Yoshiyuki,Hush Glen

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6747109/6757318/06757460.pdf?arnumber=6757460

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1. Enabling High-Efficient ReRAM-Based CNN Training Via Exploiting Crossbar-Level Insignificant Writing Elimination;IEEE Transactions on Computers;2023-11

2. Using Logging-on-Write to Improve Non-Volatile Memory Checkpoints via Processing-in-Memory;2023 IEEE 35th International Symposium on Computer Architecture and High Performance Computing (SBAC-PAD);2023-10-17

3. Integration of Memristive Devices into a 130 nm CMOS Baseline Technology;Springer Series on Bio- and Neurosystems;2023-09-20

4. Mechanisms of conductive filament formation in hafnium oxide multilayer structures;Thin Solid Films;2023-09

5. CREAM: Computing in ReRAM-Assisted Energy- and Area-Efficient SRAM for Reliable Neural Network Acceleration;IEEE Transactions on Circuits and Systems I: Regular Papers;2023-08

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