GaN HEMT Modeling versus Bias Point and Gate Width-Reference-Cited by-同舟云学术

GaN HEMT Modeling versus Bias Point and Gate Width

Published:2023-06-29 Issue: Volume: Page:
ISSN:
Container-title:2023 58th International Scientific Conference on Information, Communication and Energy Systems and Technologies (ICEST)
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Author:

Crupi Giovanni¹,Latino Mariangela²,Gugliandolo Giovanni²,Marinković Zlatica³,Cai Jialin⁴,Fazio Enza⁵,Donato Nicola²

Affiliation:

1. University of Messina,BIOMORF Department,Messina,Italy,98125

2. University of Messina,Engineering Department,Messina,Italy,98166

3. University of Niš,Faculty of Electronic Engineering,Niš,Serbia,18000

4. Ministry of Education, College of Electronics and Information, Hangzhou Dianzi University,Key Laboratory of RF Circuit and System,Hangzhou,China,310018

5. University of Messina,MIFT Department,Messina,Italy,98166

Funder

Ministry of Science, Technological Development and Innovations of the Republic of Serbia

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10187211/10187213/10187364.pdf?arnumber=10187364

Reference25 articles.

1. The large world of FET small-signal equivalent circuits (invited paper)

2. High-Frequency Extraction of the Extrinsic Capacitances for GaN HEMT Technology

3. A reliable and efficient small‐signal parameter extraction method for GaN HEMTs

4. A New Small-Signal Parameter Extraction Technique for Large Gate-Periphery GaN HEMTs

5. An Improved Small-Signal Parameter-Extraction Algorithm for GaN HEMT Devices

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