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High-Frequency Extraction of the Extrinsic Capacitances for GaN HEMT Technology

  • Published:2011-08 Issue:8 Volume:21 Page:445-447
  • ISSN:1531-1309
  • Container-title:IEEE Microwave and Wireless Components Letters
  • language:
  • Short-container-title:IEEE Microw. Wireless Compon. Lett.

Author:

Crupi Giovanni,Schreurs Dominique M. M.-P.,Caddemi Alina,Raffo Antonio,Vanaverbeke Frederik,Avolio Gustavo,Vannini Giorgio,De Raedt Walter

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 36 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On the Extraction of Accurate Non-Quasi-Static Transistor Models for E-Band Amplifier Design: Learning From the Past;IEEE Transactions on Microwave Theory and Techniques;2024-09

2. Evaluating Nine Machine Learning Algorithms for GaN HEMT Small Signal Behavioral Modeling through K-fold Cross-Validation;Engineering, Technology & Applied Science Research;2024-08-02

3. A Scalable Knowledge-Based Neural Network Model for GaN HEMTs With Accurate Trapping and Self-Heating Effects Characterization;IEEE Transactions on Microwave Theory and Techniques;2023-09

4. GaN HEMT Modeling versus Bias Point and Gate Width;2023 58th International Scientific Conference on Information, Communication and Energy Systems and Technologies (ICEST);2023-06-29

5. Equivalent small-signal model of InP-based HEMTs with accurate radiation effects characterization;Journal of Applied Physics;2023-05-25
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