A low power 52.9 GHz static divider implemented in a manufacturable 180 GHz AlInAs/InGaAs HBT IC technology-Reference-Cited by-同舟云学术

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A low power 52.9 GHz static divider implemented in a manufacturable 180 GHz AlInAs/InGaAs HBT IC technology

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Container-title:GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)
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Author:

Sokolich M.,Docter D.P.,Brown Y.K.,Kramer A.R.,Jensen J.F.,Stanchina W.E.,Thomas S.,Fields C.H.,Ahmari D.A.,Lui M.,Martinez R.,Duvall J.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx4/5869/15629/00722642.pdf?arnumber=722642

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Clock and data recovery IC for 40-Gb/s fiber-optic receiver;IEEE Journal of Solid-State Circuits;2002-09

2. A low-power 72.8-GHz static frequency divider in AlInAs/InGaAs HBT technology;IEEE Journal of Solid-State Circuits;2001-09

3. High-speed integrated optoelectronic modulation circuit;IEEE Photonics Technology Letters;2001-06

4. Submicron scaling of HBTs;IEEE Transactions on Electron Devices;2001

5. InP-HBT optoelectronic integrated circuits for photonic analog-to-digital conversion;IEEE Journal of Solid-State Circuits;2001

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