A Design Procedure for High-Efficiency and Compact-Size 5–10-W MMIC Power Amplifiers in GaAs pHEMT Technology-Reference-Cited by-同舟云学术

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A Design Procedure for High-Efficiency and Compact-Size 5–10-W MMIC Power Amplifiers in GaAs pHEMT Technology

Published:2013-08 Issue:8 Volume:61 Page:2922-2933
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Nikandish Gholamreza,Medi Ali

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx7/22/6574225/06565413.pdf?arnumber=6565413

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Simple Design Method for Harmonic-Tuned GaN MMIC Power Amplifier Using Real-to-Real LPF Matching Network;IEEE Microwave and Wireless Technology Letters;2024-05

2. $W$-Band GaN T/R Single Chip With 1-W Output Power and 6.4-dB Noise Figure for AESA Applications;IEEE Transactions on Microwave Theory and Techniques;2024

3. Ku-Band High-Efficiency Broadband MMIC Poawer Amplifier in 0.25-$\mu \mathrm{m}$ GaAs pHEMT Technology;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27

4. A novel design procedure of a compact-size X-band shunt feedback amplifier;International Journal of Electronics;2023-05-08

5. GaN Integrated Circuit Power Amplifiers: Developments and Prospects;IEEE Journal of Microwaves;2023-01

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