GaN Integrated Circuit Power Amplifiers: Developments and Prospects
Author:
Affiliation:
1. School of Electrical and Electronic Engineering, University College Dublin, Dublin, Ireland
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
General Earth and Planetary Sciences,General Environmental Science
Link
http://xplorestaging.ieee.org/ielx7/9171629/10007536/09962239.pdf?arnumber=9962239
Reference100 articles.
1. 7 GHz MMIC GaN Doherty Power Amplifier With 47% Efficiency at 7 dB Output Back-Off
2. Bandwidth Enhancement of GaN MMIC Doherty Power Amplifiers Using Broadband Transformer-Based Load Modulation Network
3. A 24–28-GHz Doherty Power Amplifier With 4-W Output Power and 32% PAE at 6-dB OPBO in 150-nm GaN Technology
4. A 24–28-GHz GaN MMIC Synchronous Doherty Power Amplifier With Enhanced Load Modulation for 5G mm-Wave Applications
5. Breaking the Bandwidth Limit: A Review of Broadband Doherty Power Amplifier Design for 5G
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