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On-Wafer Characterization of Silicon Transistors Up To 500 GHz and Analysis of Measurement Discontinuities Between the Frequency Bands

  • Published:2018-07 Issue:7 Volume:66 Page:3332-3341
  • ISSN:0018-9480
  • Container-title:IEEE Transactions on Microwave Theory and Techniques
  • language:
  • Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Fregonese SebastienORCID,De matos MagaliORCID,Deng MarinaORCID,Potereau Manuel,Ayela Cedric,Aufinger KlausORCID,Zimmer ThomasORCID

Funder

H2020 European Institute of Innovation and Technology

EU Taranto

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Cited by 30 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Establishing On-Wafer Calibration Standards for the 16-Term Error Model: Application to Silicon High-Frequency Transistor Characterization;IEEE Journal of Microwaves;2024-07

2. Accurate on Wafer Calibration and S-parameter Measurement Setup for InP-based HEMT Devices to 220 GHz;Progress In Electromagnetics Research M;2024

3. Precise Modeling of Coplanar Device Measurements Under Realistic Conditions up to G-Band;IEEE Transactions on Components, Packaging and Manufacturing Technology;2023-10

4. Interlaboratory Investigation of On-wafer S-parameter Measurements from 110 GHz to 1.1 THz;2023 53rd European Microwave Conference (EuMC);2023-09-19

5. Asymmetrical De-Embedding Method for Millimeter-Wave On-Wafer Measurement;2023 IEEE 16th International Conference on Electronic Measurement & Instruments (ICEMI);2023-08-09
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