$Q$-Band and $W$-Band Power Amplifiers in 45-nm CMOS SOI-Reference-Cited by-同舟云学术

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$Q$-Band and $W$-Band Power Amplifiers in 45-nm CMOS SOI

Published:2012-06 Issue:6 Volume:60 Page:1870-1877
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Kim Joohwa,Dabag Hayg,Asbeck Peter,Buckwalter James F.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx5/22/6205402/06197245.pdf?arnumber=6197245

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 90 GHz Broadband Balanced 8-Way Power Amplifier for High Precision FMCW Radar Sensors in 65-nm CMOS;Sensors;2022-04-19

2. A 94-GHz Power Amplifier with Transformer-based Two-way Power Combining in 65-nm CMOS;2021 Photonics & Electromagnetics Research Symposium (PIERS);2021-11-21

3. Space-Compliant Design of a Millimeter-Wave GaN-on-Si Stacked Power Amplifier Cell through Electro-Magnetic and Thermal Simulations;Electronics;2021-07-26

4. A 77 GHz Power Amplifier Design with in-Phase Power Combing for 20 dBm Psat in a 40-nm CMOS Technology;2021 IEEE International Symposium on Circuits and Systems (ISCAS);2021-05

5. Single and Power-Combined Linear E-Band Power Amplifiers in 0.12-$\mu$ m SiGe With 19-dBm Average Power 1-GBaud 64-QAM Modulated Waveforms;IEEE Transactions on Microwave Theory and Techniques;2019-04

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