Characterization of the Nonlinear Thermal Resistance and Pulsed Thermal Dynamic Behavior of AlGaN–GaN HEMTs on SiC-Reference-Cited by-同舟云学术

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Characterization of the Nonlinear Thermal Resistance and Pulsed Thermal Dynamic Behavior of AlGaN–GaN HEMTs on SiC

Published:2013-05 Issue:5 Volume:61 Page:1879-1891
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Florian Corrado,Santarelli Alberto,Cignani Rafael,Filicori Fabio

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx7/22/6512606/06502280.pdf?arnumber=6502280

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. RF GaN-HEMT Technology Evaluation Framework Based on Drain Current Transient Measurements;2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC);2023-11-08

2. Gate Geometry-Dependent Thermal Impedance of Depletion Mode HEMTs;IEEE Transactions on Electron Devices;2023-10

3. A Simple Method to Extract the Thermal Resistance of GaN HEMTs From De-Trapping Characteristics;IEEE Electron Device Letters;2023-06

4. An accurate method to extract thermal resistance of GaN-on-Si HEMTs;Applied Physics Letters;2023-05-22

5. C-Band High Harmonics Suppression GaN Power Amplifier MMIC for Multiradar Network Application;IEEE Microwave and Wireless Technology Letters;2023-03

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