Comprehensive Noise Characterization and Modeling for 65-nm MOSFETs for Millimeter-Wave Applications-Reference-Cited by-同舟云学术

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Comprehensive Noise Characterization and Modeling for 65-nm MOSFETs for Millimeter-Wave Applications

Published:2010-04 Issue:4 Volume:58 Page:740-746
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Sheng-Chun Wang ,Pin Su ,Kun-Ming Chen ,Kuo-Hsiang Liao ,Bo-Yuan Chen ,Sheng-Yi Huang ,Cheng-Chou Hung ,Guo-Wei Huang

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx5/22/5446455/05427061.pdf?arnumber=5427061

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An Approach to Determine Noise Model Parameter for Submicron MOSFET from RF Noise Figure Measurement;IEEE Journal of the Electron Devices Society;2024

2. Thermal Noise Measurement and Characterization for Modern Semiconductor Devices;IEEE Instrumentation & Measurement Magazine;2021-04

3. A W-Band LNA/Phase Shifter With 5-dB NF and 24-mW Power Consumption in 32-nm CMOS SOI;IEEE Transactions on Microwave Theory and Techniques;2018-04

4. Observation of nonconservation characteristics of radio frequency noise mechanism of 40-nm n-MOSFET;Chinese Physics B;2018-02

5. Frequency and bias dependent modeling of induced gate noise and cross-correlation noise in 40 nm metal-oxide-semiconductor field-effect transistors;Acta Physica Sinica;2016

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