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Millimeter-Wave FET Nonlinear Modelling Based on the Dynamic-Bias Measurement Technique

  • Published:2014-11 Issue:11 Volume:62 Page:2526-2537
  • ISSN:0018-9480
  • Container-title:IEEE Transactions on Microwave Theory and Techniques
  • language:
  • Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Avolio Gustavo,Raffo Antonio,Angelov Iltcho,Vadala Valeria,Crupi Giovanni,Caddemi Alina,Vannini Giorgio,Schreurs Dominique M. M.-P.

Funder

FWO—Vlaanderen (Belgium) and EMRP ‘HF Circuits’ project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Cited by 24 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Compact Large-Signal Model Generation of GaN HEMT for RF Circuit Design Implication;2023 IEEE Wireless Antenna and Microwave Symposium (WAMS);2023-06-07

2. An Accurate Model for InP HEMT Small-Signal Equivalent Circuit Based on EM Simulation;IEEE Transactions on Electron Devices;2023-03

3. Harmonic Included CSWPL Model for Broadband PA Design Based on GaN HEMTs;IEEE Transactions on Electron Devices;2023

4. How Large-Signal Measurement Techniques Improve the Accuracy of Microwave Transistor Nonlinear Models;2022 Asia-Pacific Microwave Conference (APMC);2022-11-29

5. Performance projection of multi‐bias and nonlinear distortion for gallium arsenides nano‐pHEMT;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2022-11-22
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