Electrode Engineering in Memristors Development for Non-/Erasable Storage, Random Number Generator, and Synaptic Applications
Author:
Affiliation:
1. University of Southampton,School of Electronics & Computer Science,Southampton,U.K,SO17 1BJ
2. University of York York,Department of Physics,U.K,YO10 5DD
3. University of Edinburgh,School of Engineering,Edinburgh,U.K,EH9 3FB
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9888260/9888270/09888713.pdf?arnumber=9888713
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1. Retention-failure mechanism of TaN∕Cu[sub x]O∕Cu resistive memory with good data retention capability
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3. Low-power electronic technologies for harsh radiation environments
4. Suboxide interface induced digital-to-analog switching transformation in all Ti-based memristor devices
5. Memristive crossbar arrays for brain-inspired computing
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