Nonvolatile ternary resistive switching memory devices based on the polymer composites containing zinc oxide nanoparticles
Author:
Affiliation:
1. School of Electronic Engineering
2. Heilongjiang University
3. Harbin
4. China
5. School of Chemistry and Materials Science
Abstract
Nonvolatile ternary memory devices were fabricated from the composites polymer blends containing zinc oxide (ZnO) nanoparticles.
Funder
National Natural Science Foundation of China
Publisher
Royal Society of Chemistry (RSC)
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://pubs.rsc.org/en/content/articlepdf/2018/CP/C7CP07887K
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1. Design of a Photoactive Hybrid Bilayer Dielectric for Flexible Nonvolatile Organic Memory Transistors
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4. Preparation of MoS2-Polyvinylpyrrolidone Nanocomposites for Flexible Nonvolatile Rewritable Memory Devices with Reduced Graphene Oxide Electrodes
5. Memristive devices based on graphene oxide
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