A 1300-V 0.34-$\Omega\cdot\hbox{cm}^{2}$ Partial SOI LDMOSFET With Novel Dual Charge Accumulation Layers-Reference-Cited by-同舟云学术

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A 1300-V 0.34-$\Omega\cdot\hbox{cm}^{2}$ Partial SOI LDMOSFET With Novel Dual Charge Accumulation Layers

Published:2010-08 Issue:8 Volume:57 Page:1959-1965
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Elahipanah Hossein,Orouji Ali A.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/5518459/05475312.pdf?arnumber=5475312

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