A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors-Reference-Cited by-同舟云学术

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A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors

Published:2011-01 Issue:1 Volume:58 Page:132-140
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Joh Jungwoo,del Alamo Jesús A.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/5673443/05625898.pdf?arnumber=5625898

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1. Investigation of Power Cycling Degradation on the Dynamic ON-Resistance of HD-GITs;IEEE Transactions on Industrial Electronics;2024-11

2. Degradation analysis of GaN-based high–electron-mobility transistors under different stresses in semi-on state conditions;Solid-State Electronics;2024-10

3. Investigation of Electrical Characteristics and Trapping Effects in p-GaN Gate HEMTs Under Electron Irradiation;IEEE Transactions on Electron Devices;2024-08

4. Electrical and Small-Signal Characteristics Degradation of RF GaN HEMTs Under Repetitive ESD Stresses;IEEE Transactions on Electron Devices;2024-08

5. Alternative Measurement Approach for the Evaluation of Hot-Electron Degradation in p-GaN Gate AlGaN/GaN Power HEMTs;Electronic Materials;2024-07-23

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