Author:
Tang Xinling,Zhang Yu,Sai Zhaoyang,Han Ronggang,Wu Junmin,Pan Yan
Cited by
3 articles.
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1. Active elimination of DC bias current of a SiC based dual active bridge by controlling the dead time period;IET Power Electronics;2024-08-08
2. Analysis and Suppression of 6.5kV SiC MOSFET Turn-on Current Overshoot;2021 IEEE 5th Conference on Energy Internet and Energy System Integration (EI2);2021-10-22
3. 15kV Press Pack SiC IGBT;2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia);2021-08-25