Analysis and Suppression of 6.5kV SiC MOSFET Turn-on Current Overshoot-Reference-Cited by-同舟云学术

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Analysis and Suppression of 6.5kV SiC MOSFET Turn-on Current Overshoot

Published:2021-10-22 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE 5th Conference on Energy Internet and Energy System Integration (EI2)
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Author:

Du Yujie¹,Shi Hao¹,Chen Yanfang¹,Tang Xinling¹,Tian Lixin¹,Li Shiyan²,Yang Fei¹,Wu Junmin¹

Affiliation:

1. Global Energy Interconnection Research Institute Co.,Ltd,State Key Laboratory of Advanced Power Transmission Technology,Beijing,China

2. Nanjing Electronic Device Institute,State Key Laboratory of Wide-Bandgap Semiconductor Power Electronic Devices,Nanjing,China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9712847/9712848/09713561.pdf?arnumber=9713561

Reference12 articles.

1. The next generation of high voltage (10 kV) silicon carbide power modules

2. Influence of Stray Capacitance on Dynamic Test Results of Power Semiconductor devices

3. Fabrication of 6.5kV High voltage Full SiC Power MOSFET Modules[J];xiaoxing;Proceeding of the CSEE,0

4. Influence of Distributed Capacitance on Switching Characteristics of 6500V SiC MOSFET

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