Optimized Junction Termination Extension and Ring System for 11 kV 4H-SiC BJT-Reference-Cited by-同舟云学术

Optimized Junction Termination Extension and Ring System for 11 kV 4H-SiC BJT

Published:2022-10-12 Issue: Volume: Page:
ISSN:
Container-title:2022 International Semiconductor Conference (CAS)
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Author:

Ammar Ali¹,Lazar Mihai²,Vergne Bertr³,Scharnholz Sigo³,Phung Luong Viet¹,Sonneville Camille¹,Raynaud Christophe¹,Morel Herve¹,Planson Dominique¹,Zielinski Marcin¹

Affiliation:

1. Univ Lyon, INSA Lyon, Universite Claude Bernard Lyon 1, Ecole Centrale de Lyon, CNRS, AMPERE,Lyon,France,F-69621

2. Light,Nanomaterials, Nanotechnologies, L2N, EMR CNRS7004, Universite de Technologie de Troyes,Troyes,France,10300

3. French-German Research Institute of Saint Louis,Saint Louis,France,68300

Funder

ANR

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9933917/9933992/09934390.pdf?arnumber=9934390

Reference11 articles.

1. 10 kV, 10 A Bipolar Junction Transistors and Darlington Transistors on 4H-SiC

2. 1000-V, 30-A 4H-SiC BJTs with high current gain

3. 15 kV-Class Implantation-Free 4H-SiC BJTs With Record High Current Gain

4. Precise Automated Semiconductor Characterization Under Ambient Control for testing wide bang gap semiconductors;vergne;International Symposium on High Voltage Engineering (ISH) 2015,2015

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1. Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor;Solid State Phenomena;2024-08-23

2. Design, Fabrication and Characterization of 10 kV 4H-SiC BJT for the Phototransistor Target;Romanian Journal of Information Science and Technology;2023-03-27