Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor-Reference-Cited by-同舟云学术

Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor

Published:2024-08-23 Issue: Volume:360 Page:127-131
ISSN:1662-9779
Container-title:Solid State Phenomena
language:
Short-container-title:SSP

Author:

Brosselard Pierre¹^ORCID,Planson Dominique¹^ORCID,Tournier Dominique¹^ORCID,Bevilacqua Pascal¹,Sonneville Camille¹,Phung Luong Viet¹^ORCID,Lazar Mihai²,Vergne Bertrand³,Scharnholz Sigo³,Morel Hervé¹

Affiliation:

1. Univ Lyon, INSA Lyon, Univ. Claude Bernard Lyon 1

2. Université de Technologie de Troyes

3. French–German Research Institute of Saint Louis

Abstract

In this paper, a first demonstration of the optical triggering of a 10 kV 4H-SiC Bipolar Junction Transistor is reported. A laser emitting UV (349 nm) has been used for the generation electron-hole pairs within the device. A current density of about 20 A.cm-2 has been obtained. This low value in comparison with 100 A.cm-2 for “conventional” BJT is due to the narrow pulse width (5 ns). The current waveform shows the effect of the carrier lifetime in the base and collector regions. From these measurements, we have extracted the IC (VCE) characteristics for different laser optical power and the switch-on time which is about 1 µs.

Publisher

Trans Tech Publications, Ltd.

Link

https://www.scientific.net/SSP.360.127.pdf

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