Conventional CMOS technology based RadFET dosimeter for Ionizing Radiation Detection for High Energy Applications
Author:
Affiliation:
1. Shri Ramdeobaba College of Engineering and Management,Department of Electronics Engineering,Nagpur,India
2. Indian Institute of Technology,Department of Electrical Engineering,Hyderabad,India
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10543249/10543223/10543341.pdf?arnumber=10543341
Reference23 articles.
1. Total-Ionizing-Dose Effects and Low-Frequency Noise in 16-nm InGaAs FinFETs With HfO2/Al2O3 Dielectrics
2. Local Electro-Thermal Annealing for Repair of Total Ionizing Dose-Induced Damage in Gate-All-Around MOSFETs
3. Ionizing radiation tolerance of high-performance SiGe HBT's grown by UHV/CVD
4. Design, Development and Irradiation Testing of 3-Channel Preamplifier for Ultrasonic NDT;Kumar,2017
5. Comparison of Total Ionizing Dose Effect on Tolerance of SCL 180 nm Bulk and SOI CMOS Using TCAD Simulation
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