Demonstration of $L_{g} \sim \hbox{55}\ \hbox{nm}$ pMOSFETs With $\hbox{Si/Si}_{0.25}\hbox{Ge}_{0.75}/\hbox{Si}$ Channels, High $I_{\rm on}/I_{\rm off}\ (≫ \hbox{5} \times \hbox{10}^{4})$ , and Controlled Short Channel Effects (SCEs)-Reference-Cited by-同舟云学术

Demonstration of $L_{g} \sim \hbox{55}\ \hbox{nm}$ pMOSFETs With $\hbox{Si/Si}_{0.25}\hbox{Ge}_{0.75}/\hbox{Si}$ Channels, High $I_{\rm on}/I_{\rm off}\ (≫ \hbox{5} \times \hbox{10}^{4})$ , and Controlled Short Channel Effects (SCEs)

Published:2008-09 Issue:9 Volume:29 Page:1017-1020
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Lee Se-Hoon,Majhi Prashant,Oh Jungwoo,Sassman Barry,Young Chadwin,Bowonder Anupama,Loh Wei-Yip,Choi Kyu-Jin,Cho Byung-Jin,Lee Hi-Deok,Kirsch Paul,Harris Harlan R.,Tsai Wilman,Datta Suman,Tseng Hsing-Huang,Banerjee Sanjay K.,Jammy Raj

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/4604831/04604846.pdf?arnumber=4604846

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