Partially Depleted SONOS FinFET for Unified RAM (URAM)—Unified Function for High-Speed 1T DRAM and Nonvolatile Memory-Reference-Cited by-同舟云学术

Partially Depleted SONOS FinFET for Unified RAM (URAM)—Unified Function for High-Speed 1T DRAM and Nonvolatile Memory

Published:2008-07 Issue:7 Volume:29 Page:781-783
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Han Jin-Woo,Ryu Seong-Wan,Kim Chung-Jin,Kim Sungho,Im Maesoon,Choi Sung Jin,Kim Jin Soo,Kim Kwang Hee,Lee Gi Sung,Oh Jae Sub,Song Myeong Ho,Park Yun Chang,Kim Jeoung Woo,Choi Yang-Kyu

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/4558060/04558090.pdf?arnumber=4558090

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