Volatile and Nonvolatile Characteristics of Asymmetric Dual-Gate Thyristor RAM with Vertical Structure-Reference-Cited by-同舟云学术

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Volatile and Nonvolatile Characteristics of Asymmetric Dual-Gate Thyristor RAM with Vertical Structure

Published:2018-09-01 Issue:9 Volume:18 Page:5882-5886
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:j nanosci nanotechnol

Author:

Kim Hyun-Min¹,Kwon Dae Woong²,Kim Sihyun¹,Lee Kitae¹,Lee Junil¹,Park Euyhwan¹,Lee Ryoongbin¹,Kim Hyungjin¹,Kim Sangwan³,Park Byung-Gook¹

Affiliation:

1. Inter-University Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Korea

2. Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720-1770, USA

3. Department of Electrical and Computer Engineering, Ajou University, Suwon 16499, Korea

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Performance of thyristor memory device formed by a wet etching process;Nanotechnology;2018-11-16

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