Comparative Study on 45nm, 90nm and 180nm 6T SRAM Technologies-Reference-Cited by-同舟云学术

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Comparative Study on 45nm, 90nm and 180nm 6T SRAM Technologies

Published:2024-04-23 Issue: Volume:2 Page:271-275
ISSN:
Container-title:2024 7th International Conference on Devices, Circuits and Systems (ICDCS)
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Author:

R. Nithin Kumar N.¹,Bhattacharya Sabitabratta¹,Narasimhan S Lakshmi¹,Naik Amogh R¹,M Rohanth Hari¹

Affiliation:

1. New Horizon College of Engineering,Dept. of Electronics and Comm.,Bangalore,Karnataka,India

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10560478/10560483/10560818.pdf?arnumber=10560818

Reference14 articles.

1. Design and Analysis of 6T SRAM Cell with Low Power Dissipation;Gadag;International Journal of Engineering Research and Application (IJERA),2012

2. A comparative study of 6T, 8T and 9T decanano SRAM cell

3. Proposal of a new ultra low leakage 10T sub threshold SRAM bitcell

4. Sub-quarter micron SRAM cells stability in low-voltage operation: a comparative analysis

5. A 256 kb 65 nm 8T Subthreshold SRAM Employing Sense-Amplifier Redundancy

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