A 256 kb 65 nm 8T Subthreshold SRAM Employing Sense-Amplifier Redundancy-Reference-Cited by-同舟云学术

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A 256 kb 65 nm 8T Subthreshold SRAM Employing Sense-Amplifier Redundancy

Published:2008-01 Issue:1 Volume:43 Page:141-149
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Verma Naveen,Chandrakasan Anantha P.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/4/4443178/04443213.pdf?arnumber=4443213

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