Microwave noise parameters of HEMTs vs. temperature by a simplified measurement procedure-Reference-Cited by-同舟云学术

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Microwave noise parameters of HEMTs vs. temperature by a simplified measurement procedure

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Container-title:Proceedings of EDMO '96
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Author:

Caddemi A.,Di Paola A.,Sannino M.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx3/4384/12502/00575819.pdf?arnumber=575819

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Development and validation of ANN approach for extraction of MESFET/HEMT noise model parameters;Electrical Engineering;2017-04-21

2. Extraction of microwave FET noise wave temperatures by using a novel neural approach;COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering;2016-01-04

3. Novel neural approach for parameter extraction of microwave transistor noise models;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2015-07-14

4. Analysis and validation of neural network approach for extraction of small-signal model parameters of microwave transistors;Microelectronics Reliability;2013-03

5. Temperature-dependent models of low-noise microwave transistors based on neural networks;International Journal of RF and Microwave Computer-Aided Engineering;2005

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