Advances in foundry SiGe HBT BiCMOS processes through modeling and device scaling for ultra-high speed applications
Author:
Funder
Defense Advanced Research Projects Agency (DARPA)
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9682201/9682202/09682485.pdf?arnumber=9682485
Reference9 articles.
1. A 90nm SiGe BiCMOS technology for mm-wave and high-performance analog applications
2. A 130nm SiGe BiCMOS technology for mm-Wave applications featuring HBT with fT/fMAX of 260/320 GHz
3. A millimeter-wave capable SiGe BiCMOS process with 270GHz FMAX HBTs designed for high volume manufacturing
4. Ultra high speed SiGe NPN for advanced BiCMOS technology
5. Augmented Drift-Diffusion Transport for the Simulation of Advanced SiGe HBTs
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