On the High-Field Transport and Uniaxial Stress Effect in Ge PFETs-Reference-Cited by-同舟云学术

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On the High-Field Transport and Uniaxial Stress Effect in Ge PFETs

Published:2011-02 Issue:2 Volume:58 Page:384-391
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Kobayashi Masaharu,Mitard Jérôme,Irisawa Toshifumi,Hoffmann Thomas-Y.,Meuris Marc,Saraswat Krishna,Nishi Yoshio,Heyns Marc

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/5697316/05668501.pdf?arnumber=5668501

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Formation of Thin NiGe Films by Magnetron Sputtering and Flash Lamp Annealing;Nanomaterials;2020-03-31

2. Crystalline SrZrO3deposition on Ge (001) by atomic layer deposition for high-kdielectric applications;Journal of Applied Physics;2018-07-28

3. Ultimate Performance Projection of Ultrathin Body Transistor Based on Group IV, III-V, and 2-D-Materials;IEEE Transactions on Electron Devices;2016-02

4. Review—Device Assessment of Electrically Active Defects in High-Mobility Materials;ECS Journal of Solid State Science and Technology;2016

5. New concept of planar germanium MOSFET with stacked germanide layers at source/drain;Japanese Journal of Applied Physics;2015-03-19

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