Surface-Passivation Effects on the Performance of 4H-SiC BJTs-Reference-Cited by-同舟云学术

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Surface-Passivation Effects on the Performance of 4H-SiC BJTs

Published:2011-01 Issue:1 Volume:58 Page:259-265
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Ghandi Reza,Buono Benedetto,Domeij Martin,Esteve Romain,Schoner Ado,Han Jisheng,Dimitrijev Sima,Reshanov Sergey A.,Zetterling Carl-Mikael,Ostling Mikael

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/5673443/05611585.pdf?arnumber=5611585

Cited by 50 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A review of the etched terminal structure of a 4H-SiC PiN diode;Journal of Semiconductors;2023-11-01

2. Robust and Area Efficient 4H-SiC 1.2 and 3.3 kV Floating Field Ring (FFR) and Trench-FFR Termination Designs and Analysis;2023 IEEE Energy Conversion Congress and Exposition (ECCE);2023-10-29

3. High-voltage SiC power devices for improved energy efficiency;Proceedings of the Japan Academy, Series B;2022-04-11

4. 6.5 kV SiC Power Devices with Improved Blocking Characteristics against Process Deviations;JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE;2021-04-30

5. Demonstration of the Short-circuit Ruggedness of a 10 kV Silicon Carbide Bipolar Junction Transistor;2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe);2020-09

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