Threshold Voltage Fluctuation by Random Telegraph Noise in Floating Gate nand Flash Memory String-Reference-Cited by-同舟云学术

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Threshold Voltage Fluctuation by Random Telegraph Noise in Floating Gate nand Flash Memory String

Published:2011-01 Issue:1 Volume:58 Page:67-73
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Joe Sung-Min,Yi Jeong-Hyong,Park Sung-Kye,Shin Hyungcheol,Park Byung-Gook,Park Young June,Lee Jong-Ho

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/5673443/05640663.pdf?arnumber=5640663

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Flash-Based Security Primitives: Evolution, Challenges and Future Directions;Cryptography;2021-02-04

2. RealWear: Improving performance and lifetime of SSDs using a NAND aging marker;Performance Evaluation;2021-01

3. Random Telegraph Noise in Flash Memories;Noise in Nanoscale Semiconductor Devices;2020

4. Systematic Characterization of Random Telegraph Noise and Its Dependence with Magnetic Fields in MOSFET Devices;Noise in Nanoscale Semiconductor Devices;2020

5. The effect of hydrogen on programmed threshold-voltage distribution in NAND flash memories;Japanese Journal of Applied Physics;2019-07-11

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